The insulated gate bipolar transistors (IGBTs) combines an easily driven MOS gate and low conduction loss, and is quickly displacing power bipolar transistors as the device of choice for high current ...

Several measurements can be used to quantify the ruggedness of an IGBT, including gate voltage, short circuit and UIS ratings. This engineering essentials article explains how each of these measures ...

Measuring the actual collector-emitter breakdown voltage is practically impossible without destroying the device. Therefore, BVCES is the collector-emitter voltage at which no more than the specified ...

For the PDF version of this article, click here. Proper gate drive is critical to the performance and reliability of insulated gate bipolar transistor (IGBT) modules. The gate driver must produce high ...